ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing-Reference-Cited by-同舟云学术

ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing

Published:1998-09 Issue:1-4 Volume:21 Page:305-318
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Alluri Prasad¹²,Majhi Prashant¹,Tang Derek¹,Dey Sandwip K.¹

Affiliation:

1. a Department of Chemical, Bio and Materials Engineering, and Center for Solid State Electronics Research , Arizona State University , Tempe , AZ , 85287-6006

2. b Materials Research and Strategic Technologies, Motorola, Inc. , Austin , TX

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202072

Reference8 articles.

1. Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

2. MOCVD of high-TC superconducting materials

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