Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films-Reference-Cited by-同舟云学术

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

Published:2007-11 Issue:11 Volume:13 Page:595-600
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Wrobel A. M.,Blaszczyk-Lezak I.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference35 articles.

1. A covalent micro/nano-composite resistant to high-temperature oxidation

2. Silicon carbonitride: a rival to cubic boron nitride

3. Silicon carbonitride, a new hard material and its relation to the confusion about ‘harder than diamond’ C3N4

4. Stability of Silicon Carbonitride Phases

5. Structure and chemistry of silicon nitride and silicon carbonitride thin films deposited from ethylsilazane in ammonia or hydrogen

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