A Multiscale Simulation Approach for the MOCVD of GaN Using a Single-Molecule Precursor in a Vertical Stagnation Flow Reactor-Reference-Cited by-同舟云学术

A Multiscale Simulation Approach for the MOCVD of GaN Using a Single-Molecule Precursor in a Vertical Stagnation Flow Reactor

Published:2005-07 Issue:6-7 Volume:11 Page:306-316
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Mukinovic M.,Brenner G.,Khanderi J.,Spöllmann S.,Fischer R. A.,Tafipolsky M.,Cadenbach T.,Schmid R.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference57 articles.

1. S. Nakamura, G. Farsol, The Blue Laser Diode, Springer Verlag, Berlin 1997.

2. Novel metalorganic chemical vapor deposition system for GaN growth

3. S. Nakamura, S. Sakai, in Jpn. Kokai Tokkyo Koho, Nichia Kagaku Kogyo K. K., Japan 1991, p. 8.

4. Mater. Res. Soc. Symp. Proc., Vol. 395 (Eds: R. D. Dupuis, I. A. Edmond, F. A. Ponce, S. Nakamura), Materials Research Society, Pittsburgh, PA 1996.

5. GaN Growth by Metallorganic Vapor Phase Epitaxy: A Comparison of Modeling and Experimental Measurements

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ALD Simulations;Atomic Layer Deposition for Semiconductors;2013-10-19

2. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications;Coordination Chemistry Reviews;2013-07

3. Co-complexation Syntheses, Structural Characterization, and DFT Studies of a Novel Series of Polymeric Alkali-Metal Tetraorganogallates;Organometallics;2013-01-11

4. From Charge Transfer Complexes to Nanorods;The Journal of Physical Chemistry C;2008-08-05

5. Theoretical determination of accurate rate constants: Application to the decomposition of a single-molecule precursor;Surface and Coatings Technology;2007-09