Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors-Reference-Cited by-同舟云学术

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Comparison of Thermal and Mass-Transport Properties of Bi(tmhd)3, Bi(p-tol)3, and Bi(o-tol)3 MOCVD Precursors

Published:2005-05 Issue:5 Volume:11 Page:261-268
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Bedoya C.,Condorelli G. G.,Finocchiaro S. T.,Di Mauro A.,Fragalà I. L.,Cattaneo L.,Carella S.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference61 articles.

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3. Memories are made of …

4. Evidence for PT-ferroelectrics interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors

5. Study of the decomposition of an aqueous metal–chelate gel precursor for (Bi,La)4Ti3O12 by means of TGA–FTIR, TGA–MS and HT-DRIFT

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