Fabrication of poly-Si complementary metal oxide semiconductor inverter by all sputtering deposition process-Reference-Cited by-同舟云学术

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Fabrication of poly-Si complementary metal oxide semiconductor inverter by all sputtering deposition process

Published:2014-07 Issue:7 Volume:22 Page:364-369
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Yeh Wenchang¹,Huang Boting²

Affiliation:

1. Interdisciplinary Graduate School of Science and Engineering; Shimane University; 1060 Nishikawatsu-cyo Matsue City Shimane 690-8504 Japan

2. Department of Electronics; National Taiwan University of Science and Technology; Taipei 106 Taiwan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jsid.268/fullpdf

Reference17 articles.

1. XeCl excimer laser annealing used to fabricate poly-Si TFT's;Sameshima;Jpn. J. Appl. Phys.,1989

2. Excimer-laser-annealed poly-Si thin-film transistors;Brotherton;IEEE Trans. Electron Dev.,1993

3. CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C

4. CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600°C;Takabatake;IEEE Trans. Electron Dev.,1991

5. K. Tatsuki et al Microcrystalline silicon TFT crystallized by near-infrared diode laser for large sized AMOLED TV 109 112 2008

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1. High performance thin-film transistors fabricated on a single crystal Si strip by micro-chevron laser beam scanning method;Japanese Journal of Applied Physics;2020-07-01

2. Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2;Journal of Information Display;2018-08-20

3. Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA);Journal of Information Display;2017-09-11

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