Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)
Author:
Affiliation:
1. LAPIS Semiconductor Co., 2-4-8 Shinyokohama, Kouhoku-ku, Japan
2. Faculty of Engineering, University of the Ryukyus, Nishihara, Japan
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Materials Science
Link
https://tandfonline.com/doi/pdf/10.1080/15980316.2017.1372315
Reference16 articles.
1. T. Mohammed-Brahim, S. Janfaoui, K. Kandoussi, C. Simon, and N. Coulon, Proc. AM-FPD’12, 6-1, 2012, p. 313.
2. Crystallization of a-Si films with smooth surfaces by using Blue Multi-Laser Diode Annealing
3. Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing
4. A. Okamoto and T. Serikawa, J. Electrochem. Soc. 134, 1479 (1987).
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