P-6: Static Reliability of Bridged-Grain Poly-Si TFTs-Reference-Cited by-同舟云学术

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P-6: Static Reliability of Bridged-Grain Poly-Si TFTs

Published:2014-06 Issue:1 Volume:45 Page:964-967
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Zhang Meng¹,Zhou Wei¹,Chen Rongsheng¹,Zhao Shuyun²,Wong Man¹,Kwok Hoi-Sing¹

Affiliation:

1. State Key Lab on Advanced Displays and Optoelectronics, the Hong Kong University of Science and Technology; Clear Water Bay Kowloon Hong Kong

2. Nanoelectronics Fabrication Facility; Hong Kong University of Science and Technology; Clear Water Bay Kowloon Hong Kong

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00250.x/fullpdf

Reference17 articles.

1. “Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors under Synchronized Voltage Stress,”;Zhang;IEEE Trans. Electron devices,2009

2. H. Kuriyama S. Kiyama S. Noguchi T. Kuwahara S. Ishida T. Nohda K. Sano H. Iwata S. Tsuda S. Nakano “High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics,” IEDM Tech. Dig. 1991 563 566

3. “Negative Bias Temperature Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors,”;Chen;IEEE Trans. Electron devices,2006

4. “Bias-Temperature-Stress Characteristics of ZnO/HfO2 Thin-Film Transistors,”;Siddiqui;IEEE Trans. Electron devices,2012

5. “Xecl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs,”;Sameshima;IEEE Electron Device Lett.,1986

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