Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor-Reference-Cited by-同舟云学术

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

Published:2021-02-23 Issue:17 Volume:31 Page:2011077
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zeng Binjian¹^ORCID,Liu Chen¹,Dai Siwei¹,Zhou Pingan¹,Bao Keyu¹,Zheng Shuaizhi¹,Peng Qiangxiang¹,Xiang Jinjuan²,Gao Jianfeng²,Zhao Jie²,Liao Min¹,Zhou Yichun¹

Affiliation:

1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and Engineering Xiangtan University Xiangtan 411105 China

2. Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202011077

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