High‐Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High‐Performance Field‐Effect Transistors-Reference-Cited by-同舟云学术

High‐Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High‐Performance Field‐Effect Transistors

Published:2021-10 Issue:1 Volume:32 Page:2107119
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Li Yahui¹²³,Zheng Miaomiao²⁴,Yao Jian²⁴,Gong Wenbin⁵,Li Yijun⁶,Tang Jianshi⁶,Feng Shun⁷,Han Ruyue⁷,Sui Qicheng²³,Qiu Song¹²^ORCID,Kang Lixing¹²^ORCID,Jin Hehua¹²^ORCID,Sun Dongming⁷,Li Qingwen¹²^ORCID

Affiliation:

1. School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China 96 Jinzhai Road Hefei 230026 China

2. Division of Advanced Nano‐Materials Suzhou Institute of Nanotech and Nano‐bionics Chinese Academy of Science 398 Ruoshui Road Suzhou 215123 China

3. Nano Science and Technology Institute University of Science and Technology of China 166 Ren'ai Road Suzhou 215123 China

4. School of Physical Science and Technology Shanghai Tech University 393 Middle Huaxia Road Pudong Shanghai 201210 China

5. School of Physics and Energy Xuzhou University of Technology Xuzhou 221018 China

6. Institute of Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University 30 Shuangqing Road Beijing 100084 China

7. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202107119

Reference60 articles.

1. The road to carbon nanotube transistors

2. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

3. Scaling carbon nanotube complementary transistors to 5-nm gate lengths

4. 30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes

5. Solution-Processing of High-Purity Semiconducting Single-Walled Carbon Nanotubes for Electronics Devices

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