Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms-Reference-Cited by-同舟云学术

Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

Published:2021-02-19 Issue:21 Volume:31 Page:2011175
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Achilli Simona¹^ORCID,Le Nguyen H.²,Fratesi Guido¹,Manini Nicola¹,Onida Giovanni¹,Turchetti Marco³,Ferrari Giorgio⁴,Shinada Takahiro⁵,Tanii Takashi⁶,Prati Enrico³

Affiliation:

1. Dipartimento di Fisica Università degli Studi di Milano Via Celoria 16 Milano 20133 Italy

2. Advanced Technology Institute and Department of Physics University of Surrey Guildford GU2 7XH UK

3. Istituto di Fotonica e Nanotecnologie Consiglio Nazionale delle Ricerche Piazza Leonardo da Vinci 32 Milano 20133 Italy

4. Dipartimento di Elettronica Informazione e Bioingegneria Politecnico di Milano Piazza Leonardo da Vinci 32 Milan 20133 Italy

5. Center for Innovative Integrated Electronic Systems (CIES) Tohoku University 468‐1 Aramaki Aza Aoba, Aoba‐ku Sendai Miyagi 980‐8572 Japan

6. Faculty of Science and Engineering Waseda University 3‐4‐1 Ohkubo Shinjuku Tokyo 169‐8555 Japan

Funder

Horizon 2020

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202011175

Reference48 articles.

1. Electron spin resonance of substitutional nitrogen in silicon

2. GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

3. Ab initio description of highly correlated states in defects for realizing quantum bits

4. T.Shinada E.Prati T.Tanii T.Teraji S.Onoda F.Jelezko J.Isoya in2016 IEEE 16th Int. Conf. on Nanotechnology (IEEE‐Nano) IEEE Piscataway NJ2016 pp.888–890.

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