Affiliation:
1. Hefei National Research Center for Physical Sciences at the Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 P. R. China
2. Institute of Energy Hefei Comprehensive National Science Center Hefei 230041 P. R. China
Abstract
AbstractAntimony selenosulfide (Sb2(S,Se)3) is considered as a promising light‐harvesting material and has been widely used in solar cells. For high‐efficiency Sb2(S,Se)3 solar cells, the most commonly used electron‐transporting layer of cadmium sulfide (CdS) is generally prepared by chemical bath deposition (CBD) approach. However, the hazardous waste liquid from the chemical bath and the sensitivity of the deposition process to the environment are challenges to practical applications. Herein, a molecular beam epitaxy deposition is reported to prepare CdS films, overcoming the drawbacks of CBD process. Furthermore, through introducing oxygen during the deposition of CdS, the sulfur vacancy defects generated in the vacuum deposition process are suppressed. The performance of Sb2(S,Se)3 solar cells is accordingly improved significantly. This improvement is attributed to the following aspects: i) the improved optical transmittance of CdS films. ii) The enhanced [hk1] orientation of Sb2(S,Se)3 absorber layer. iii) The improved heterojunction quality and suppressed carrier recombination. As a result, a power conversion efficiency of 8.59% for Sb2(S,Se)3 solar cells is achieved. This study provides a novel strategy for preparing electron‐transporting layers for efficient chalcogenide thin‐film solar cells and sheds new light on large‐area solar cell applications.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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