All‐Electrical Detection of the Spin‐Charge Conversion in Nanodevices Based on SrTiO3 2‐D Electron Gases

Author:

Gallego Fernando1,Trier Felix12,Mallik Srijani1,Bréhin Julien1,Varotto Sara1,Moreno Vicente‐Arche Luis1,Gosavy Tanay3,Lin Chia‐Ching3,Coudevylle Jean‐René4,Iglesias Lucía1,Casanova Fèlix56,Young Ian3,Vila Laurent7,Attané Jean‐Philippe7,Bibes Manuel1ORCID

Affiliation:

1. Unité Mixte de Physique, CNRS Thales Université Paris‐Saclay Palaiseau 91767 France

2. Department of Energy Conservation and Storage Technical University of Denmark 2800 Kgs. Lyngby Denmark

3. Components Research Intel Corp. Hillsboro OR 97124 USA

4. Centre de Nanosciences et de Nanotechnologies CNRS Université Paris‐Sud Université Paris‐Saclay C2N Palaiseau 91120 France

5. CIC nanoGUNE BRTA Donostia‐San Sebastián Basque Country 20018 Spain

6. IKERBASQUE Basque Foundation for Science Bilbao Basque Country 48009 Spain

7. Univ. Grenoble Alpes CNRS CEA SPINTEC Grenoble 38000 France

Abstract

AbstractThe Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin‐orbit (SO) element for information read‐out through spin‐charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two‐dimensional electron gases (2DEGs) have shown very large spin‐charge conversion efficiencies, albeit mostly in spin‐pumping experiments. Here, all‐electrical spin‐injection and spin‐charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin‐charge conversion signal is optimized by applying back‐gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non‐volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond‐CMOS computing architectures.

Funder

H2020 European Research Council

Agence Nationale de la Recherche

European Commission

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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