Chaos at Interface Brings Order into Oxide/Silicon Structure-Reference-Cited by-同舟云学术

Chaos at Interface Brings Order into Oxide/Silicon Structure

Published:2021-06-25 Issue:36 Volume:31 Page:2104925
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Averyanov Dmitry V.¹,Sokolov Ivan S.¹,Karateev Igor A.¹,Taldenkov Alexander N.¹,Kondratev Oleg A.¹,Parfenov Oleg E.¹,Tokmachev Andrey M.¹,Storchak Vyacheslav G.¹^ORCID

Affiliation:

1. National Research Center “Kurchatov Institute” Kurchatov Sq. 1 Moscow 123182 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104925

Reference36 articles.

1. A universal 3D imaging sensor on a silicon photonics platform

2. Operation of a silicon quantum processor unit cell above one kelvin

3. Efficient tandem solar cells with solution-processed perovskite on textured crystalline silicon

4. Enhanced ferroelectricity in ultrathin films grown directly on silicon

5. Crystalline Oxides on Silicon

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1. Interfacial bond engineering for direct integration of functional oxides with Si and Ge;Journal of Materials Chemistry C;2023

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3. Enhancing the electronic properties of VLS-grown silicon nanowires by surface charge transfer;Applied Surface Science;2022-10

4. Interface-controlled integration of functional oxides with Ge;Journal of Materials Chemistry C;2021