Quasi‐1D Polymer Semiconductor–Diarylethene Blends: High Performance Optically Switchable Transistors

Author:

Chen Yusheng1,Wang Hanlin1,Chen Hu2,Zhang Weimin3,Xu Shunqi1,Pätzel Michael4,Ma Chun1,Wang Cang1,McCulloch Iain35,Hecht Stefan4,Samorì Paolo1ORCID

Affiliation:

1. Université de Strasbourg CNRS ISIS 8 allée Gaspard Monge 67000 Strasbourg France

2. School of Physical Sciences Great Bay University Dongguan 523000 China

3. Physical Sciences and Engineering Division KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) KSC Thuwal 23955‐6900 Saudi Arabia

4. Department of Chemistry & IRIS Adlershof Humboldt‐Universität zu Berlin Brook‐Taylor‐Str. 2 12489 Berlin Germany

5. Department of Chemistry University of Oxford Oxford OX1 3TA UK

Abstract

AbstractOptically switchable field‐effect transistors (OSFETs) are non‐volatile photonic memory devices holding a great potential for applications in optical information storage and telecommunications. Solution processing of blends of photochromic molecules and π‐conjugated polymers is a low‐cost protocol to integrate simultaneously optical switching and charge transport functions in large‐area devices. However, the limited reversibility of the isomerization of photochromic molecules due to steric hindrance when embedded in ordered polymeric matrices represents a severe limitation and it obliges to incorporate as much as 20% in weight of the photochromic component, thereby drastically diluting the electronic function, limiting the device performance. Herein, a comparative study of the photoresponsivity of a suitably designed diarylethene molecule is reported when embedded in the matrix of six different polymer semiconductors displaying diverse charge transport properties. In particular, this study focuses on three semi‐crystalline polymers and three quasi‐1D polymers. It is found that 1% w/w of 1,2‐bis(5‐(3,5‐di‐tert‐butylphenyl)‐2‐methylthiophen‐3‐yl)cyclopent‐1‐ene in a blend with poly(indacenodithiophene‐co‐benzothiadiazole) is sufficient to fabricate OSFETs combining photo‐modulation efficiencies of 45.5%, mobilities >1 cm2 V−1s−1, and photo‐recovered efficiencies of 98.1%. These findings demonstrate that quasi‐1D polymer semiconductors, because of their charge transport dominated by intra‐molecular processes, epitomize the molecular design principles required for the fabrication of high‐performance OSFETs.

Funder

Agence Nationale de la Recherche

Institut Universitaire de France

Deutsche Forschungsgemeinschaft

King Abdullah University of Science and Technology

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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