Field‐Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers-Reference-Cited by-同舟云学术

Field‐Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers

Published:2022-03-08 Issue:26 Volume:32 Page:2112561
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Kim Hyun‐Joong¹,Moon Kyoung‐Woong¹^ORCID,Tran Bao Xuan²,Yoon Seongsoo²,Kim Changsoo¹,Yang Seungmo¹,Ha Jae‐Hyun²,An Kyongmo¹,Ju Tae‐Seong¹,Hong Jung‐Il²^ORCID,Hwang Chanyong¹^ORCID

Affiliation:

1. Quantum Technology Institute Korea Research Institute of Standards and Science (KRISS) 267 Gajeong‐ro Daejeon 34113 Republic of Korea

2. Department of Emerging Materials Science Daegu Gyeongbuk Institute of Science and Technology (DGIST) 333 Technojungang‐daero Daegu 42988 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202112561

Reference54 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Low-power non-volatile spintronic memory: STT-RAM and beyond

4. Characterization and Manipulation of Spin Orbit Torque in Magnetic Heterostructures

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