Strong Interlayer Transition in Few‐Layer InSe/PdSe 2 van der Waals Heterostructure for Near‐Infrared Photodetection

Author:

Ahmad Waqas1,Liu Jidong2,Jiang Jizhou3,Hao Qiaoyan1,Wu Di1,Ke Yuxuan1,Gan Haibo1,Laxmi Vijay1,Ouyang Zhengbiao4,Ouyang Fangping5,Wang Zhuo1,Liu Fei2,Qi Dianyu1,Zhang Wenjing1ORCID

Affiliation:

1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China

2. State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and Technology School of Electronics and Information Technology Sun Yat‐sen University Guangzhou 510275 China

3. School of Environmental Ecology and Biological Engineering School of Chemistry and Environmental Engineering Wuhan Institute of Technology Wuhan Hubei 430205 P. R. China

4. College of Physics and Optoelectronic Engineering, and THz Technical Research Center of Shenzhen University Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 P. R. China

5. Hunan Key Laboratory of Super‐microstructure and Ultrafast Process School of Physics and Electronics Central South University No. 932, South Lushan Road Changsha Hunan Province 410083 P. R. China

Funder

Shenzhen Peacock Plan

Science, Technology and Innovation Commission of Shenzhen Municipality

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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