The Hidden Potential of Polysilsesquioxane for High‐ k : Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device-Reference-Cited by-同舟云学术

The Hidden Potential of Polysilsesquioxane for High‐ k : Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device

Published:2021-10-19 Issue:7 Volume:32 Page:2104030
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Ye Heqing¹,Kwon Hyeok‐jin²,Shin Su Cheol³,Lee Hwi‐young⁴,Park Young Ho³,Tang Xiaowu¹,Wang Ruxian¹,Lee Kanghyuck⁴,Hong Jisu²,Li Zhijun¹,Jeong Wonkyo⁴,Kim Jiyeong⁴,Park Chan Eon²,Lee Jihoon³⁴⁵,An Tae Kyu³⁴⁵,In Insik³⁴⁵,Kim Se Hyun¹^ORCID

Affiliation:

1. Department of Advanced Organic Materials Engineering Yeungnam University Gyeongsan 38541 Republic of Korea

2. Department of Chemical Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea

3. Chemical Industry Institute Korea National University of Transportation Chungju 27469 Republic of Korea

4. Department of IT⋅Energy Convergence (BK21 Four) Korea National University of Transportation Chungju 27469 Republic of Korea

5. Department of Polymer Science and Engineering Korea National University of Transportation Chungju 27469 Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute for Advancement of Technology

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104030

Reference71 articles.

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4. Recent Progress in High-Mobility Organic Transistors: A Reality Check

5. Halogenated Tetraazapentacenes with Electron Mobility as High as 27.8 cm2 V−1 s−1 in Solution-Processed n-Channel Organic Thin-Film Transistors

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