Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides-Reference-Cited by-同舟云学术

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Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides

Published:2021-07-23 Issue:46 Volume:31 Page:2102567
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Iqbal Shahid¹,Duy Le Thai²,Kang Hyunwoo¹,Singh Ranveer²,Kumar Mohit¹,Park Jucheol³,Seo Hyungtak¹²^ORCID

Affiliation:

1. Department of Energy Systems Research Ajou University Gyeonggi‐do 16499 South Korea

2. Department of Materials Science and Engineering Ajou University Gyeonggi‐do 16499 South Korea

3. Gyeongbuk Science Technology Promotion Center Gumi Electronics and Information Technology Research Institute Gumi 39717 South Korea

Funder

National Research Foundation of Korea

Ajou University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102567

Reference52 articles.

1. A brain-plausible neuromorphic on-the-fly learning system implemented with magnetic domain wall analog memristors

2. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

3. Resistive random-access memory based on ratioed memristors

4. Emerging Artificial Synaptic Devices for Neuromorphic Computing

5. Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

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1. Two-dimensional materials based memtransistors: Integration strategies, switching mechanisms and advanced characterizations;Nano Energy;2024-09

2. The rise of memtransistors for neuromorphic hardware and In-memory computing;Nano Energy;2024-07

3. Complementary memtransistors for neuromorphic computing: How, what and why;Journal of Semiconductors;2024-06-01

4. Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V₂O₃ Films and the Influence of its Variability on Scaled Devices;Advanced Physics Research;2024-05-22

5. Low-voltage short-channel MoS2 memtransistors with high gate-tunability;Journal of Materials Research;2024-04-26

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