Low‐Cost Tin Oxide Transparent Conductive Films for Silicon Heterojunction Solar Cells

Author:

Guo Jiacheng12,Li Shuhan1,Cui Yuhan1,Zhou Yurong1ORCID,Guo Wanwu3,Hu Yan3,Xing Yansi3,Zhou Yuqin1,Liu Fengzhen1

Affiliation:

1. Center of Materials Science and Opto‐Electronics Engineering College of Materials Science and Opto‐Electronic Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China

2. Binzhou Institute of Technology Shandong 256606 P. R. China

3. Jetion Solar(China) Co., Ltd Jiangsu 214400 P. R. China

Abstract

AbstractIndium‐based transparent conductive oxide (TCO) films are widely used in various photoelectric devices including silicon heterojunction (SHJ) solar cells. However, high cost of indium‐based TCO films is not conducive to mass production of the SHJ solar cells. A variety of indium‐free or indium‐less TCOs are explored and utilized presently. Here, SnOx films are deposited by reactive plasma deposition (RPD) with metal tin as the evaporation source. The metal‐reaction deposited SnOx films feature low resistivity (<2 × 10−3 Ω cm), high mobility (35.93 cm2 V−1 S−1), and wide optical bandgap (3.64 eV). A power conversion efficiency (PCE) of 25.33% is achieved on the champion SHJ solar cell using the metal‐reaction deposited SnOx as the back TCO layer, which indicates the application potential of the metal‐reaction‐deposited SnOx as a low‐cost substitute for In‐based TCOs in SHJ solar cells and other photoelectric devices.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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