Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks-Reference-Cited by-同舟云学术

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Published:2021-07-17 Issue:41 Volume:31 Page:2103291
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Min Ju¹^ORCID,Lee Changhyeon²,Shin Eui Joong¹,Lee Tae In¹,Kim Seongho¹,Jeong Jaejoong¹,Choi Junhwan²,Hwang Wan Sik³,Im Sung Gap²^ORCID,Cho Byung Jin¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea

2. Department of Bio‐chemical Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea

3. Department of Smart Drone Convergence/Materials Engineering Korea Aerospace University Goyang 10540 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202103291

Reference61 articles.

1. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

3. Polymer and Organic Nonvolatile Memory Devices

4. Organic and hybrid resistive switching materials and devices

5. Nanostructured materials for non-volatile organic transistor memory applications

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