High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn‐Doped SiGe Thin Films-Reference-Cited by-同舟云学术

High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn‐Doped SiGe Thin Films

Published:2020-07-15 Issue:38 Volume:30 Page:2002513
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Huanming¹,Sun Sen²,Lu Jiating¹,Xu Jiayin¹,Lv Xiaowei³,Peng Yong³,Zhang Xi¹,Wang Yuan²,Xiang Gang¹^ORCID

Affiliation:

1. College of Physics Sichuan University Chengdu 610064 China

2. Key Laboratory of Radiation Physics and Technology Ministry of Education Institute of Nuclear Science and Technology Sichuan University Chengdu 610064 China

3. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education Lanzhou University Lanzhou 730000 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202002513

Reference43 articles.

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3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

4. Achieving high Curie temperature in (Ga,Mn)As

5. Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

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