Affiliation:
1. Key Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University) Ministry of Education 5268 Renmin Street Changchun 130024 P. R. China
2. Beijing Laboratory for Electron Microscopy Institute of Physics Chinese Academy of Sciences Beijing 100190 P. R. China
Abstract
AbstractDirect observation of oxygen dynamics in an oxide‐based second‐order memristor can provide the valid evidence to clarify the memristive mechanism, however, which is still limited for now. In this study, the migration and diffusion of oxygen ions in the region of Pt/WO3‐x Schottky interface are observed in the WO3‐x second‐order memristor by using the technique of in situ transmission electron microscopy (TEM) and the electron energy loss spectroscopy. Interestingly, the coexistence of memristive and memcapacitive switching can be implemented in this memristor. Combined with the analysis of depth‐profile X‐ray photoelectron spectroscopy (XPS), an interface‐barrier‐modulation second‐order memristive model is proposed based on the above results. Notably, temporally correlative oxygen dynamics in the memristor offers the platform to integrate signals from multiple inputs, enabling the realization of the dendritic functions of synchronous and asynchronous integration for the application of logic operations with fault‐tolerance capability and associative learning. These findings provide the experimental evidence to in‐depth understanding of oxygen dynamics and switching mechanism in second‐order memristor, which can support the optimization of memristive performance and the achievement of biorealistic synaptic functions.
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials