Charge Carrier Mobility and Series Resistance Extraction in 2D Field‐Effect Transistors: Toward the Universal Technique-Reference-Cited by-同舟云学术

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Charge Carrier Mobility and Series Resistance Extraction in 2D Field‐Effect Transistors: Toward the Universal Technique

Published:2021-07-16 Issue:41 Volume:31 Page:2105003
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Chien Yu‐Chieh¹,Feng Xuewei¹,Chen Li¹,Chang Kai‐Chun²,Tan Wee Chong¹,Li Sifan¹,Huang Li¹,Ang Kah‐Wee¹³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore 117583 Singapore

2. Department of Physics National Sun Yat‐Sen University 70 Lien‐hai Road Kaohsiung 80424 Taiwan

3. Institute of Materials Research and Engineering A*STAR 2 Fusionopolis Way Singapore 138634 Singapore

Funder

Science and Engineering Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202105003

Reference52 articles.

1. Graphene and two-dimensional materials for silicon technology

2. WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

3. Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates

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