15.2: Invited Paper: Back‐Channel‐Etch Thin Film Transistors with Zinc Tin Oxide as Barrier Layer via Spray Coating-Reference-Cited by-同舟云学术

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15.2: Invited Paper: Back‐Channel‐Etch Thin Film Transistors with Zinc Tin Oxide as Barrier Layer via Spray Coating

Published:2019-09 Issue:S1 Volume:50 Page:152-152
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Li Min¹,Xu Hua¹,Zou Jianhua²,Tao Hong²,Wang Lei²,Peng Junbiao²,Xu Miao²

Affiliation:

1. Guangzhou New Vision Optoelectronic Co., Ltd. Guangzhou 510530 PR China

2. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 PR China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13419

Reference4 articles.

1. Spatial Atmospheric Atomic Layer Deposition of InxGayZnzO for Thin Film Transistors

2. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

3. Back channel etch chemistry of advanced a-Si:H TFTs

4. Damage-Free Back Channel Wet-Etch Process in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer

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