Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors-Reference-Cited by-同舟云学术

Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors

Published:2009-12-14 Issue:5 Volume:207 Page:1245-1248
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Oudwan Maher,Moustapha Oumkelthoum,Abramov Alexey,Daineka Dmitriy,Bonnassieux Yvan,Cabarrocas Pere Roca i

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200925403/fullpdf

Reference12 articles.

1. Highly stable amorphous-silicon thin-film transistors on clear plastic

2. A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

3. Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

4. Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low-Frequency Noise Measurements

5. Influence of process steps on the performance of microcrystalline silicon thin film transistors

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