Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C-Reference-Cited by-同舟云学术

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Ambipolar a-SiGe:H thin-film transistors fabricated at 200°C

Published:2012-09 Issue:17 Volume:358 Page:2340-2343
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Dominguez Miguel,Rosales Pedro,Torres Alfonso,Moreno Mario,Molina Joel,De la Hidalga Francisco,Zuniga Carlos,Calleja Wilfrido

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

2. Characteristics of Bottom Gate Thin Film Transistors with Silicon rich poly-Si1-xGex and poly-Si fabricated by Reactive Thermal Chemical Vapor Deposition

3. Process-controlled staggered ambipolar amorphous-silicon thin-film transistor

4. Modeling of ambipolar a-Si:H thin-film transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of a-SiGe:H Thin Film Transistors with HfO₂ as gate insulator by TCAD simulations;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

2. High electrical conductivity of P type a-SiGe:H films deposited by PECVD;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

3. Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States;Electronics;2020-06-18

4. Study of nanocrystalline silicon-germanium for the development of thin film transistors;The European Physical Journal Applied Physics;2020-01

5. Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD;MRS Advances;2018-12

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