Evaluation of MESFET structures from temperature-dependent Hall effect measurements-Reference-Cited by-同舟云学术

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Evaluation of MESFET structures from temperature-dependent Hall effect measurements

Published:2003-01 Issue:1 Volume:195 Page:243-247
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Terziyska P.,Blanc C.,Pernot J.,Peyre H.,Contreras S.,Bastide G.,Robert J. L.,Camassel J.,Morvan E.,Dua C.,Brylinski C. C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Characterization of Semiconductor Materials and Devices;Springer Handbook of Electronic and Photonic Materials;2017

2. TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC;Microelectronic Engineering;2014-03

3. DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures;Journal of the Korean Physical Society;2010-05-14

4. I–V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors;Thin Solid Films;2010-02

5. Electrical characterization of semiconductor materials and devices—review;Journal of Materials Science: Materials in Electronics;2006-08

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