Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique-Reference-Cited by-同舟云学术

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

Published:2007-04 Issue:4 Volume:204 Page:987-991
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kaniewska M.,Engström O.,Pacholak-Cybulska M.,Sadeghi M.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Study of electron traps inn‐GaAs grown by molecular beam epitaxy

2. Deep levels induced by InAs/GaAs quantum dots

3. M. Kaniewska, O. Engström, and M. Pacholak-Cybulska, submitted to E-MRS, Spring Meeting, 29 May-2 June, 2006, Nice, France; Mater. Sci. Eng. C (2007), in press.

4. Statistics of electron emission from InAs/GaAs quantum dots

5. O. Engström, A. Eghtedari, and M. Kaniewska, submitted to E-MRS, Spring Meeting, 29 May-2 June, 2006, Nice, France; Mater. Sci. Eng. C (2007), in press.

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