Author:
Porro Samuele,Ciechonski Rafal R.,Syväjärvi Mikael,Yakimova Rositza
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Properties of Silicon Carbide (INSPEC emis Datareviews N. 13, 1995), pp. 5-9.
2. Defect Formation Mechanism of Bulk SiC
3. The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers
4. Structural improvement in sublimation epitaxy of 4H–SiC
5. , , and , Inst. Phys. Conf. Ser. 142 (Bristol, UK, IOP, 1966), ch. 4, p. 685.
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