The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD-Reference-Cited by-同舟云学术

The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

Published:2010-05-25 Issue:6 Volume:207 Page:1379-1382
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Durkaya G.,Buegler M.,Atalay R.,Senevirathna I.,Alevli M.,Hitzemann O.,Kaiser M.,Kirste R.,Hoffmann A.,Dietz N.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Design and characterization of GaN∕InGaN solar cells

3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

4. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

5. Optical bandgap energy of wurtzite InN

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