Structural changes in arsenic ion-implanted Hg1-xCdxTe epitaxial layers-Reference-Cited by-同舟云学术

Structural changes in arsenic ion-implanted Hg1-xCdxTe epitaxial layers

Published:2007-08 Issue:8 Volume:204 Page:2714-2720
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Fodchuk I.,Zaplitnyy R.,Kazemirskiy T.,Swiatek Z.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Mercury Cadmium Telluride Photodiodes at the Beginning of the Next Millennium (Review Paper)

2. Heterostructure infrared photodiodes

3. The incorporation and diffusivity of As in Hg0.8Cd0.2Te

4. X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1–2.2 MeV B ions implanted in silicon

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4. Reconstruction of lattice structure of ion-implanted near-surface regions of Hg1−XCdXTe epitaxial layers;Thin Solid Films;2008-09

5. Structural changes in graded band-gap epitaxial layers HgCdTe after ion implantation;SPIE Proceedings;2008-05-12