Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6μm-Reference-Cited by-同舟云学术

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Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6μm

Published:2003-07 Issue:1 Volume:198 Page:R4-R6
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Talalaev V. G.,Cirlin G. E.,Tonkikh A. A.,Zakharov N. D.,Werner P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance Ge photodetectors on silicon photonics platform for optical interconnect;Sensors and Actuators A: Physical;2024-10

2. Silicon Lasers and Photonic Integrated Circuits;Springer Series in Optical Sciences;2017

3. Photoluminescence study of high density Si quantum dots with Ge core;Journal of Applied Physics;2016-01-21

4. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands;Semiconductors;2015-11

5. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures;Semiconductors;2013-11

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