Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin-Reference-Cited by-同舟云学术

Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin

Published:2006-02 Issue:3 Volume:203 Page:628-637
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Wilson J. A.,MacKenzie M.,MacFadzean S.,McMullen T.,Hamill S.,Stopford P.,Holland M. C.,Stanley C. R.,Long A. R.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

2. Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two‐dimensional electron gas mobilities

3. Growth of strained InGaAs layers on InP substrates

4. Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy

5. Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

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