Author:
Wells A.,Uren M. J.,Balmer R. S.,Nash K. J.,Martin T.,Missous M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. P. Chavarkar, I. P. Smorchkova, S. Keller, U. K. Mishra, W. Walukiewicz, and Y. Wu, Group-III nitride based high mobility transistor (HEMT) with barrier/spacer layer, US Patent Application Publication, Pub. US2002/0167023 A1, 14th November 2002.
2. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
3. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
4. Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors
5. Requirements for low intermodulation distortion in GaN-Al/sub x/Ga/sub 1-x/N high electron mobility transistors: a model assessment
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献