1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiO-Reference-Cited by-同舟云学术

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1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiO

Published:2006-06 Issue:8 Volume:203 Page:R55-R57
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Jia G.,Kittler M.,Su Z.,Yang D.,Sha J.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Silicon-based light emitters

2. M. Kittler, M. Reiche, T. Arguirov, W. Seifert, and X. Yu, IEDM Techn. Digest 2005, pp. 1027-1030.

3. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

4. Electronic band structure of high-index silicon nanowires

5. Erbium Surface-Enriched Silicon Nanowires

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1. Photoluminescence of pure silicon quantum dots embedded in an amorphous silica wire array;Journal of Materials Chemistry C;2017

2. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment;Applied Physics A;2013-05-29

3. Infrared light emission from porous silicon;Journal of Materials Science: Materials in Electronics;2008-01-20

4. Regular Dislocation Networks in Silicon. Part I: Structure;Solid State Phenomena;2007-10

5. Silicon nanostructures for IR light emitters;Materials Science and Engineering: C;2007-09

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