Top- and side-gated epitaxial graphene field effect transistors-Reference-Cited by-同舟云学术

Top- and side-gated epitaxial graphene field effect transistors

Published:2009-12-14 Issue:2 Volume:207 Page:286-290
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Li Xuebin,Wu Xiaosong,Sprinkle Mike,Ming Fan,Ruan Ming,Hu Yike,Berger Claire,de Heer Walt A.

Funder

W. M. Keck Foundation

NSF

French Partner University Fund

NSF-MRSEC

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200982453/fullpdf

Reference24 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

3. Epitaxial Graphene Transistors on SiC Substrates

4. Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene

5. Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

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