P‐1.16: Top‐gate Self‐aligned InGaZnO TFTs with Copper Light Shield Layer-Reference-Cited by-同舟云学术

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P‐1.16: Top‐gate Self‐aligned InGaZnO TFTs with Copper Light Shield Layer

Published:2019-09 Issue:S1 Volume:50 Page:685-687
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Lin ZhenGuo¹²,Zhou XingYu¹²,Ma Qian¹²,Hsu YuanJun¹²,Im JangSoon¹²,Wu Yuan-chun¹²

Affiliation:

1. National Engineering Laboratory for AMOLED Process Technology

2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd. Guangdong China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13610

Reference6 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. 21.2:Distinguished Paper: 55-inch OLED TV using InGaZnO TFTs with WRGB Pixel Design

4. Novel self-aligned top-gate oxide TFT for AMOLED displays;Morosawa N.;SID Symp, Dig. Tech.,2012

5. P-6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self-Aligned Top-Gate IGZO Thin Film Transistors

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