Ultrasoft x-ray reflection and emission spectroscopic analysis of Al2O3/Si structure synthesized by the atomic layer deposition method

Author:

Filatova E. O.,Taracheva E. Yu.,Sokolov A. A.,Bukin S. V.,Shulakov A. S.,Jonnard P.,André J.-M.,Drozd V. E.

Publisher

Wiley

Subject

Spectroscopy

Reference27 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. , , , , , . In Alternatives to SiO2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society Workshop Series, (eds). Materials Research Society: Warrendale, 2002; 3.

3. High-resolution depth profiling in ultrathin Al2O3 films on Si

4. , , , , , , , , , , . Proceedings of the International Electron Devices Meeting. San Francisco, CA, 2000.

5. Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications

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