Double‐sided transistor device processability of carrierless ultrathin silicon wafers-Reference-Cited by-同舟云学术

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Double‐sided transistor device processability of carrierless ultrathin silicon wafers

Published:2020-02-04 Issue:4 Volume:2 Page:735-742
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Lai Ruby A.¹^ORCID,Hymel Thomas M.²,Liu Bofei²,Cui Yi³

Affiliation:

1. Department of PhysicsStanford University Stanford California

2. Department of Materials Science and EngineeringStanford University Stanford California

3. SLAC National Accelerator LaboratoryStanford Institute for Materials and Energy Sciences Menlo Park California

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12087

Reference42 articles.

1. Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials

2. Flexible Electronics

3. Flexible and Stretchable Devices

4. Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

5. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

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1. Dual Coil Patterned Ultra‐Thin Silicon Film Enable by Double‐Sided Process;Advanced Materials Interfaces;2023-05-05

2. A perspective on ultralong silicon nanowires for flexible sensors;Applied Physics Letters;2022-03-28

3. Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications;Advanced Materials Technologies;2021-04-23

4. Analysis of Noise-Immune Dopingless Heterojunction Bio-TFET Considering Partial Hybridization Issue;IEEE Transactions on Nanotechnology;2020

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