Plasma‐initiated chemical vapour deposition of organosiloxane thin films: From the growth mechanisms to ultrathin low‐ k polymer insulating layers-Reference-Cited by-同舟云学术

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Plasma‐initiated chemical vapour deposition of organosiloxane thin films: From the growth mechanisms to ultrathin low‐ k polymer insulating layers

Published:2020-04-08 Issue:7 Volume:17 Page:2000032
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Abessolo Ondo Dominique¹^ORCID,Leturcq Renaud¹,Boscher Nicolas D.¹^ORCID

Affiliation:

1. Materials Research and Technology DepartmentLuxembourg Institute of Science and Technology Belvaux Luxembourg

Funder

Luxembourg National Research Fund

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.202000032

Reference34 articles.

1. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

2. Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

3. Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors

4. Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics

5. SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of double bonds and cyclic structure on the AP‐PECVD of low‐ k organosilicon insulating layers;Plasma Processes and Polymers;2021-01-20

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