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Explicit modelling of the double-gate MOSFET with VHDL-AMS

  • Published:2006 Issue:3 Volume:19 Page:239-256
  • ISSN:0894-3370
  • Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
  • language:en
  • Short-container-title:Int. J. Numer. Model.

Author:

Prégaldiny Fabien,Krummenacher François,Diagne Birahim,Pêcheux François,Sallese Jean-Michel,Lallement Christophe

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semi-empirical modeling of rectangular triple gate FinFET incorporating the effect of 2D quantum confinement;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

2. BSIM-BULK Core Model;BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-voltage;2023

3. BSIM6: Analog and RF Compact Model for Bulk MOSFET;IEEE Transactions on Electron Devices;2014-02

4. Monte Carlo analysis of dynamic characteristics and high-frequency noise performances of nanoscale double-gate MOSFETs;INT J NUMER MODEL EL;2014

5. Gate-level modeling for CMOS circuit simulation with ultimate FinFETs;Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures - NANOARCH '12;2012
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