Depth dependent strain analysis in GaN-based light emitting diodes using surface-plasmon enhanced Raman spectroscopy-Reference-Cited by-同舟云学术

Depth dependent strain analysis in GaN-based light emitting diodes using surface-plasmon enhanced Raman spectroscopy

Published:2017-03-31 Issue:8 Volume:214 Page:1600805
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lim Seung-Young¹,Kim Tae-Soo¹,Jang Bo-Gyoung¹,Hong Soon-Ku²,Song Jung-Hoon¹

Affiliation:

1. Department of Physics; Kongju National University; Gongju Chungnam 314-701 South Korea

2. Department of Materials Science & Engineering; Chungnam National University; Daejeon 305-764 South Korea

Funder

Ministry of Education

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

3. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

4. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

5. Surface-enhanced Raman scattering

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