Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO 2 contact system-Reference-Cited by-同舟云学术

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO 2 contact system

Published:2016-11-02 Issue:2 Volume:214 Page:1600522
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chen J. H.¹,Huo J. C.¹,Dai X. H.¹,Wei L. J.¹²,Guo J. X.¹,Li X. H.³,Wang L. H.⁴,Lu C. J.⁴,Wang J. B.⁵,Liu B. T.¹

Affiliation:

1. Hebei Key Lab of Optic‐Electronic Information and Materials, College of Physics Science and TechnologyHebei UniversityBaoding 071002P.R. China

2. College of Science and TechnologyNorth China Electric Power UniversityBaoding, Hebei 071051P.R. China

3. State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityHebei 066004P.R. China

4. Department of Materials Science and EngineeringHubei UniversityWuhan 430062P.R. China

5. Department of PhysicsWuhan UniversityWuhan 430072P.R. China

Funder

National Natural Science Foundation of China

National Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201600522

Reference29 articles.

1. Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

2. Graphene as an atomically thin barrier to Cu diffusion into Si

3. Investigation on the diffusion barrier properties of sputtered Mo∕W–N thin films in Cu interconnects

4. TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance–voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress

5. Ge∕HfNx diffusion barrier for Cu metallization on Si

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