Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction-Reference-Cited by-同舟云学术

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction

Published:2019-04-29 Issue:14 Volume:216 Page:1900064
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Abdullah Mohd Faizol¹,Abd Rahman Shaharin Fadzli²,Hashim Abdul Manaf¹^ORCID

Affiliation:

1. Malaysia‐Japan International Institute of TechnologyUniversiti Teknologi MalaysiaJalan Sultan Yahya Petra54100Kuala LumpurMalaysia

2. School of Electrical EngineeringFaculty of EngineeringUniversiti Teknologi Malaysia81310SkudaiJohorMalaysia

Funder

Ministry of Education

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900064

Reference31 articles.

1. Graphene oxide-based transparent conductive films

2. Review and assessment of photovoltaic performance of graphene/Si heterojunction solar cells

3. Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell

4. Broadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions

5. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

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