Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2 /Al omnidirectional reflector-Reference-Cited by-同舟云学术

Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2 /Al omnidirectional reflector

Published:2017-03-27 Issue:8 Volume:214 Page:1600789
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Won Jun-Youn¹,Kim Dae-Hyun¹,Kang Daesung¹²,Sung Jun-Suk²,Kim Da-Som³,Kim Sun-Kyung³,Seong Tae-Yeon¹⁴

Affiliation:

1. Department of Nanophotonics; Korea University; Seoul 02841 Korea

2. LED Division; LG Innotek Co. Ltd.; Paju Gyeonggi-do 10842 Korea

3. Department of Applied Physics; Kyung Hee University; Gyeonggi-do 17104 Korea

4. Department of Materials Science and Engineering; Korea University; Seoul 02841 Korea

Funder

Brain Korea 21 program funded by the Ministry of Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600789/fullpdf

Reference24 articles.

1. Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

2. Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates

3. Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes

4. Graphene-silver nanowire hybrid structure as a transparent and current spreading electrode in ultraviolet light emitting diodes

5. Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

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