Effects of Mechanical Stress on Flexible Dual-Gate a-InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Effects of Mechanical Stress on Flexible Dual-Gate a-InGaZnO Thin-Film Transistors

Published:2017-10-18 Issue:1 Volume:215 Page:1700426
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yang Jianwen¹^ORCID,Chang Ting-Chang²,Chen Bo-Wei³,Liao Po-Yung²,Chiang Hsiao-Cheng⁴,Zhang Qun¹

Affiliation:

1. Department of Materials Science; National Engineering Laboratory for TFT-LCD Materials and Technologies; Fudan University; Shanghai 200433 P.R. China

2. Department of Physics; National Sun Yat-Sen University; Kaohsiung 80424 Taiwan

3. Department of Photonics; National Sun Yat-Sen University; Kaohsiung 80424 Taiwan

4. Department of Material and Optoelectronic Science; National Sun Yat-Sen University; Kaohsiung 80424 Taiwan

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-performance flexible zinc tin oxide field-effect transistors

3. Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain

4. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

5. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

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2. 18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible a‐InGaZnO Thin‐Film Transistor;SID Symposium Digest of Technical Papers;2024-04

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