Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors-Reference-Cited by-同舟云学术

Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors

Published:2015-05-26 Issue:7 Volume:212 Page:1571-1577
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kakiuchi Hiroaki¹,Ohmi Hiromasa¹,Yamada Takahiro¹,Tamaki Shogo¹,Sakaguchi Takayuki¹,Lin WeiCheng¹,Yasutake Kiyoshi¹

Affiliation:

1. Department of Precision Science and Technology, Graduate School of Engineering; Osaka University; 2-1 Yamada-Oka Suita City Osaka 565-0871 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Cold atmospheric plasma: Sources, processes, and applications

2. Status and potential of atmospheric plasma processing of materials

3. Atmospheric plasmas for thin film deposition: A critical review

4. Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

5. Atmospheric-pressure low-temperature plasma processes for thin film deposition

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