High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen-Reference-Cited by-同舟云学术

High near infrared absorption of hyper-doped silicon induced by co-doping of sulfur and nitrogen

Published:2016-10-26 Issue:11 Volume:213 Page:2855-2860
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Xuan Yaoyu¹,Zhang Ting¹,Liu Bohan¹,Yang Ruihan¹,Ahmad Waseem¹,Liu Zhijun¹,Chen Zhi¹²,Li Shibin¹

Affiliation:

1. School of Optoelectronic Information; University of Electronic Science and Technology of China; Chengdu Sichuan 610054 P.R. China

2. Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering; University of Kentucky; Lexington KY 40506 USA

Funder

National Natural Science Foundation of China

University of Kentucky

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600524/fullpdf

Reference30 articles.

1. Mechanism of optical absorption enhancement of surface textured black silicon

2. Black silicon with self-cleaning surface prepared by wetting processes

3. Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon

4. Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

5. Insight into insulator-to-metal transition of sulfur-doped silicon by DFT calculations

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3. First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen;Applied Physics Express;2018-02-23