Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process-Reference-Cited by-同舟云学术

Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process

Published:2012-03-05 Issue:6 Volume:209 Page:1168-1173
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Bae Seong-Ju,Choi JeHyuk,Kim Dong-Hyun,Ju In-Chan,Shin Chan-Soo,Ko Chul-Gi,Yu Jae Su

Funder

Industrial Strategic Technology Development Program funded by the Gyeonggi Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127557/fullpdf

Reference17 articles.

1. High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application

2. History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes

3. Performance of high-power III-nitride light emitting diodes

4. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes

5. Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate

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1. Using nanoimprint lithography to improve the light extraction efficiency and color rendering of dichromatic white light-emitting diodes;Nanoscale;2015

2. Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts;IEEE Journal of the Electron Devices Society;2014-03

3. High-Efficiency GaN-Based Vertical Light-Emitting Diodes with Periodic Beveled Rod-Shaped Structures;Journal of Nanoscience and Nanotechnology;2013-06-01