Stress-dislocation management in MOVPE of GaN on SiC wafers-Reference-Cited by-同舟云学术

Stress-dislocation management in MOVPE of GaN on SiC wafers

Published:2016-06-16 Issue:10 Volume:213 Page:2759-2763
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rudinsky M. E.¹,Yakovlev E. V.¹,Lundin W. V.²,Sakharov A. V.²³,Zavarin E. E.²,Tsatsulnikov A. F.³⁴,Velikovskiy L. E.⁵

Affiliation:

1. STR Group − Soft-Impact, Ltd.; Engels ave. 27, P.O. Box 83 194156 St. Petersburg Russia

2. Ioffe Institute; Politechnicheskaya 26 194021 St. Petersburg Russia

3. Submicron Heterostructures for Microelectronics; Research & Engineering Center, RAS; 194021 St. Petersburg Russia

4. Saint Petersburg National Research University of Information Technologies; Mechanics and Optics; Kronverskyi 49 197101 St. Petersburg Russia

5. JSC Research and Production Company “Micran”; Kirova Ave. 51d 634041 Tomsk Russia

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Residual strains in GaN grown on 6H-SiC

2. In situ stress measurements during MOCVD growth of AlGaN on SiC

3. In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

4. In situ stress measurements during direct MOCVD growth of GaN on SiC

5. MOVPE growth of GaN on Si – Substrates and strain

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3. A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates;Technical Physics Letters;2020-10

4. Progress in Modeling of III-Nitride MOVPE;Progress in Crystal Growth and Characterization of Materials;2020-08

5. Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure;Japanese Journal of Applied Physics;2019-05-29